[1]岳皎洁,坚佳莹,董芃凡,等.衬底位置与角度对CVD法制备单层MoS2形貌的影响[J].西安工业大学学报,2019,(06):669-675.[doi:10.16185/j.jxatu.edu.cn.2019.06.008 ]
 YUE Jiaojie,JIAN Jiaying,DONG Pengfan,et al.Effects of Substrate Position and Angle on Morphology of Single Layer Molybdenum Disulfide Prepared by CVD Method[J].Journal of Xi'an Technological University,2019,(06):669-675.[doi:10.16185/j.jxatu.edu.cn.2019.06.008 ]
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衬底位置与角度对CVD法制备单层MoS2形貌的影响()
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《西安工业大学学报》[ISSN:1673-9965/CN:61-1458/N]

卷:
期数:
2019年06期
页码:
669-675
栏目:
材料科学与工程
出版日期:
2019-12-25

文章信息/Info

Title:
Effects of Substrate Position and Angle on Morphology of Single Layer Molybdenum Disulfide Prepared by CVD Method
文章编号:
1673-9965(2019)06-0669-07
作者:
岳皎洁1坚佳莹2董芃凡1骆 磊1常芳娥1
(1.西安工业大学 材料与化工学院,西安 710021; 2.西安工业大学 电子信息工程学院,西安 710021
Author(s):
YUE Jiaojie1JIAN Jiaying2DONG Pengfan1LUO Lei1CHANG Fang'e1
(1.School of Materials and Chemical Engineering,Xi'an Technological University,Xi'an 710021,China; 2.School of Electronic and Information Engineering,Xi'an Technological University,Xi'an 710021,China)
关键词:
单层MoS2 化学气相沉积法 衬底位置 放置角度
Keywords:
single-layer MoS2 chemical vapor deposition substrate position substrate angle
分类号:
TB39
DOI:
10.16185/j.jxatu.edu.cn.2019.06.008
文献标志码:
A
摘要:
为了满足高性能微电子器件对二硫化钼(MoS2)薄膜低层数大尺寸的需求,文中利用化学气相沉积法(CVD)制备单层MoS2,研究钼源与衬底之间的距离和衬底的放置角度对MoS2形貌、尺寸和结构的影响,制备出大尺寸、高质量的单层MoS2。采用扫描电镜、拉曼光谱和光致发光谱对其形貌和厚度进行表征。研究结果表明:衬底和钼源的距离影响MoS2薄膜的生长,随着距离增大,MoS2薄膜尺寸呈由小及大再变小的趋势,分布由密集到均匀再至稀疏。钼源距衬底9 cm处生长的MoS2薄膜尺寸可达约70 μm,且分布均匀,形貌规则; 衬底的放置角度也影响MoS2薄膜的生长,距钼源9 cm处正面向上倾斜约20°放置衬底制备的MoS2薄膜尺寸可达约100 μm。
Abstract:
In order to meet the needs of high-performance microelectronic devices for MoS2 films with large size and fewer layers,single-layer MoS2 films were prepared by the chemical vapor deposition method(CVD).The effects of the distance between the molybdenum source and the substrate and the substrate angle on their morphology,size,and structure were studied.And then large-sized and high-quality monolayer MoS2 was prepared,whose morphology and thickness were characterized by a scanning electron microscope(SEM),Raman spectra and Photoluminescence spectra(PL).The results show that the distance between the substrate and the molybdenum source affects the growth of MoS2 films.As the distance increases,MoS2 films become from small to large and then to small,from dense to uniform and then to sparse.MoS2 film grows up to about 70 μm with uniform distribution and good morphology when the molybdenum source and the substrate are 9 cm apart.The substrate angle also affects the growth of MoS2 films.When the substrate is face-up inclined about 20° and placed downstream of the molybdenum source with a distance of 9 cm,the size of the prepared single-layer MoS2 is approximately 100 μm.

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备注/Memo

备注/Memo:
收稿日期:2019-09-14
基金资助:国家自然科学基金(51671151)。 第一作者简介:岳皎洁(1995-),女,西安工业大学硕士研究生。 通信作者简介:坚佳莹(1989-),女,西安工业大学讲师,主要研究方向为微纳电子器件及微纳电子器件用纳米材料,E-mail:jianjiaying163@163.com。 (编辑、校对 潘秋岑)
更新日期/Last Update: 2019-12-25