[1]侯雁楠,许 岗,魏永星,等.CH3NH3HgI3晶体的生长及光电性能研究[J].西安工业大学学报,2019,(06):676-681.[doi:10.16185/j.jxatu.edu.cn.2019.06.009 ]
 HOU Yannan,XU Gang,WEI Yongxing,et al.Growth and Photoelectric Properties of CH3NH3HgI3 Crystal[J].Journal of Xi'an Technological University,2019,(06):676-681.[doi:10.16185/j.jxatu.edu.cn.2019.06.009 ]
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CH3NH3HgI3晶体的生长及光电性能研究()
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《西安工业大学学报》[ISSN:1673-9965/CN:61-1458/N]

卷:
期数:
2019年06期
页码:
676-681
栏目:
材料科学与工程
出版日期:
2019-12-25

文章信息/Info

Title:
Growth and Photoelectric Properties of CH3NH3HgI3 Crystal
文章编号:
1673-9965(2019)06-0676-06
作者:
侯雁楠许 岗魏永星陈 静刘志远
(西安工业大学 材料与化工学院,西安 710021
Author(s):
HOU YannanXU GangWEI YongxingCHEN JingLIU Zhiyuan
(School of Materials and Chemical Engineering,Xi'an Technological University,Xi'an 710021,China)
关键词:
溶剂挥发法 CH3NH3HgI3多晶粉末 CH3NH3HgI3薄膜 紫光射线探测器
Keywords:
solvent volatilization method CH3NH3HgI3 polycrystalline powder CH3NH3HgI3 thin film violet ray detection
分类号:
TQ12
DOI:
10.16185/j.jxatu.edu.cn.2019.06.009
文献标志码:
A
摘要:
为探究有机金属卤化物CH3NH3HgI3的结构与光电性能间的内在规律,采用溶剂挥发法以甲基碘化胺(CH3NH3I)和碘化汞(HgI2)为反应物,以N,N-二甲基甲酰胺(DMF)为溶剂合成CH3NH3HgI3多晶粉末; 以甲醇(CH3OH)为溶剂在氧化铟锡(ITO)导电玻璃上生长了CH3NH3HgI3薄膜。利用X射线衍射仪(XRD)、紫外-可见-近红外分光光度计(UV-VIS-NIR)及电流电压测试仪(CVIV)表征其结构及光电性能。研究结果表明:制备的CH3NH3HgI3粉体为单一晶相结构; CH3NH3HgI3晶体存在多个范德华键作用面。薄膜的电阻率约为109 Ω·cm; 薄膜的禁带宽度为2.8 eV,其可见-近红外波段存在多个吸收峰,与薄膜中大量的结构缺陷有关。分析认为CH3NH3HgI3可应用于紫光探测领域。
Abstract:
The relationship between the structure and photoelectric properties of the organometallic halide methylamine mercuric iodine(CH3NH3HgI3)is investigated.The polycrystalline powder was synthesized by the solvent volatilization method with methylamine iodide(CH3NH3I)and mercuric iodide(HgI2)as reactants and N,N-dimethylformamide(DMF)as solvent; CH3NH3HgI3 thin films grew on the Indium Tin Oxide(ITO)conductive glass with methanol(CH3OH)as solvent.The structures of both the powder and thin films were analyzed with an XRD.The optical properties of the thin films were investigated with an Ultraviolet-Visible-Near-Infrared Spetrophotometer,and their electrical properties were measured with a CVIV instrument.The test showed that CH3NH3HgI3 powder had the pure crystalline phase structure.The analysis of its structure showed that there existed several weak bonding surfaces of van der Waals bond in CH3NH3HgI3 crystal structure.The thin films had a resistivity of about 109 Ω·cm and a bandgap of about 2.8 eV,and several absorption peaks occurred in the visible-near infrared region,which is related to the presence of a large number of structural defects in the films.It is concluded that CH3NH3HgI3 can be used in the field of violet ray detection.

参考文献/References:


[1] SQUILLANTE M R,SHAH K S,MOY L.Stabilization of HgI2 Xray Detectors[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,1990,288(1):79.
[2] ALEXIEV D,DYTLEWSKI N,REINHARD M I,et al.Characterisation of Singlecrystal Mercuric Iodide[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2004,517(1/3):226.
[3] 许岗,谷智,坚增运,等.HgI2晶体最低生长温度的确定[J].人工晶体学报,2012,41(5):1195. XU Gang,GU Zhi,JIAN Zengyun,et al.Study on the Lowest Growth Temperature of Mercuric Iodide Crystal[J].Journal of Synthetic Crystals,2012,41(5):1195.(in Chinese)
[4] STOUMPOS C C,MALLIAKAS C D,PETERS J A,et al.Crystal Growth of the Perovskite Semiconductor CsPbBr3:A New Material for HighEnergy Radiation Detection[J].Crystal Growth & Design,2013,13(7):2722.
[5] MIRZAEI A,HUH J S,KIM S S,et al.Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors:An Overview[J].Electronic Materials Letters,2018,14(3),261.
[6] HE Y H,KONTSEVOI O Y,STOUMPOS C C,et al.Defect Antiperovskite Compounds Hg3Q2I2 (Q= S,Se,and Te)for Room Temperature Hard Radiation Detection[J].Journal of the American Chemical Society,2017,139(23):7939.
[7] WIBOWO A C,MALLIAKAS C D,LI H,et al.An Unusual Crystal Growth Method of the Chalcohalide Semiconductor,βHg3S2Cl2:A New Candidate for Hard Radiation[J].Crystal Growth & Design,2016,16(5):2678.
[8] LI H,MENG F,MALLIAKAS C D,et al.Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection[J].Crystal Growth & Design,2016,16(11):6446.
[9] HOU H W,FAN Y T,ZHANG L P,et al.SelfAssembly of a New“4,4'BipyridylBased”Building Block with Cd(Ⅱ)and Co(Ⅱ)Cations:Synthesis and Crystal Structures of 1 and 2D Coordination Polymers[J].Inorganic Chemistry Communications,2001,4(4):168.
[10] TAN H Y,ZHANG H X,OU H D,et al.ChairForm[Ag2(1,2 Bimb)2]2+ in Silver(Ⅰ)Complexes Containing the Ditopic Ligand 1,2Bis(1Imidazolylmethyl)Benzene(1,2Bimb)[J].Inorganica Chimica Acta,2004,357(3):869.
[11] WANG R H,HONG M C,WENG J B,et al.A OneDimensional Coordination Polymer Containing Tetragonal Boxeswith Solvent Guests[J].Inorganic Chemistry Communications,2000,3(9):486.
[12] 徐虹,孟祥茹,韩华云,等.配位聚合物[HgI2(btx)]n的制备、晶体结构及性能研究(btx=对二(1,2,4三氮唑基甲基)苯)[J].无机化学学报,2004,20(9):1089. XU Hong,MENG Xiangru,HAN Huayun,et al.Synthesis,Crystal Structure and Properties of the Coordination Polymer [HgI2(btx)]n(btx=1[4(1H1,2,4triazol1ylmethyl)benzyl]1H1,2,4triazole)[J].Chinese Journal of Inorganic Chemistry,2004,20(9):1089.(in Chinese)
[13] SHARMA R P,SINGH A,VENUGOPALAN P,et al.Secondary Bonding and Coordination of Mercury in 5nitrobenzimidazolium Trihalogenomercurates(Ⅱ)[C7H6N3O2]HgX3·H2O(X=Cl,Br,I):Synthesis,Characterization by FT,IR,NQR and Single Crystal XRay Diffractions[J].Journal of Molecular Structure,2010,973(1/3):27.
[14] PAKHOMOV V I,MEDVEDEV A V,BREGADZE V I,et al.XRay Study of Barenylmercury Halides Spontaneous Symmetrization of Phenylbareny lmercury Iodide in the Crystal[J].Journal of Organometallic Chemistry,1971,29(1):15.
[15] NHALIL H,WHITESIDE V R,SELLERS I R,et al.Synthesis,Crystal and Electronic Structures and Optical Properties of(HIm)2Hg3Cl8 and(HIm)HgI3 (HIm=Imidazolium)[J].Journal of Solid State Chemistry,2018,258:551.
[16] KÖRFER M,FUESS H,BATS J W,et al.Struktur Und Eigenschaften von Doppelhalogeniden von Substituiertem Ammonium Und Quecksilber(Ⅱ).Ⅴ.Die Kristallstruktur von CH3NH3HgBr3 Und CH3NH3HgI3[J].Zeitschrift Für Anorganische Und Allgemeine Chemie,1985,525(6):23.
[17] TERAO H,OKUDA T.81Br and 127I NQR and Phase Transitions in CH3NH3HgBr3 and CH3NH3HgI3[J].Zeitschrift Für Naturforschung A,1990,45(3/4):343.
[18] XU G,JIE W Q,LI G H,et al.Study of Trapping Levels in αHgI2 Crystals by UV and Isothermal Current Measurements[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,2010,613(2):277.
[19] MELLET J,FRIANT A.I(t),I(V)and Surface Effect Studies of Vapor Grown and Solution Grown HgI2 Detectors[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,1989,283(2):199.
[20] SHARMA S L,PAL T,ACHARYA H N.A Complete Characterization of Trapping Levels in Red Mercuric Iodide Single Crystals[J].Journal of Applied Physics,1994,75(12):7884.
[21] MOHAMMEDBRAHIM T,FRIANT A,MELLET J.Characterization of Deep Energy Levels in Mercuric Iodide[J].Physica Status Solidi,1983,79(1):71.

备注/Memo

备注/Memo:
收稿日期:2018-12-19
基金资助:国家自然科学基金(11704301)。 第一作者简介:侯雁楠(1993-),女,西安工业大学硕士研究生。 通信作者简介:许 岗(1973-),男,西安工业大学副教授,主要研究方向为半导体晶体,E-mail:xxrshhuangshan@126.com。 (编辑、校对 潘秋岑)
更新日期/Last Update: 2019-12-25